PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Toshiba Corporation
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching 95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
IXGR40N60C2 IXGR40N60C2D1 |
56 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN HiPerFASTTM IGBT ISOPLUS247TM C2-Class High Speed IGBTs
|
IXYS Corporation IXYS, Corp.
|
IXGA16N60C2 IXGA16N60C2D1 IXGP16N60C2 IXGP16N60C2D |
HiPerFASTTM IGBT C2-Class High Speed IGBT
|
IXYS Corporation
|
GA200NS61U |
600V UltraFast 10-30 kHz Hs Chop S IGBT in a INT-A-Pak package High Side Switch Chopper Module Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
BUP302 Q67078-A4205-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) From old datasheet system High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的(低正向压降高开关速度低尾电流的无闩锁雪崩额定
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|